3.2T DR16 TRx-PIC

✔　3.2T DR16 TRx-PIC total loss1 ≤ 14.5dB, with working wavelength range 1311±6.5nm.

✔　Si MZM 3dB EO bandwidth ≥ 35GHz, and modulation efficiency Vpi ≤ 6.0V @ PN junction bias voltage = 2V, for 53GBaud PAM4 application.

✔　Si MZM 3dB EO bandwidth ≥ 55GHz, and modulation efficiency Vpi ≤ 7.0V @ PN junction bias voltage = 3V, for 106GBaud PAM4 application.

✔　Ge high-speed photodiode OE bandwidth ≥ 35GHz, and dark current ≤ 50nA @-1V, for 53GBaud PAM4 application.

✔　Ge high-speed photodiode OE bandwidth ≥ 60GHz, and dark current ≤ 50nA @-1V, for 106GBaud PAM4 application.

✔　Rx-part effective responsivity ≥ 0.6A/W, receiver PDL ≤ 0.5dB.

✔　Si thermo-optic phase shifter with power efficiency Ppi ≤ 10mW, heater resistance R = 120ohm.